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| SMD Type Transistors High-Frequency Amplifier Transistor 2SC3838K SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm Features +0.1 2.4-0.1 High transition frequency. (Typ. fT= 1.5GHz) Small rbb'.Cc and high gain. (Typ. 4ps) +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 20 11 3 50 0.2 150 -55 to +150 Unit V V V mA W Electrical Characteristics Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Collector-base time constant Noise factor Output capacitance Transition frequency Symbol VCBO VCEO VEBO ICBO IEBO IC=10 IC=1mA IE=10 A A Testconditons Min 20 11 3 0.5 0.5 0.5 56 4 3.5 0.8 1.4 3.2 1.5 180 12 ps dB pF GHz Typ Max Unit V V V A A V VCB=10V VEB=2V VCE(sat) IC=10mA,IB=5mA hFE rbb'.Cc NF Cob fT VCE=10V,IC=5mA VCB = 10V , IC = 10mA , f = 31.8MHz VCE = 6V , IC = 2mA , f = 500MHz , Rg = 50U VCE=10V, IE=0A, f=1MHz VCE=10V, IE=10mA, f=500MHz hFE Classification Marking Rank hFE ADN N 56 to 120 ADP P 82 to 180 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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